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Texas Instruments LMG3410R070 600V 70mΩ GaN Power Stage

Texas Instruments LMG3410R070 600V 70mΩ GaN Power Stage with integrated driver and protection offers advantages over silicon MOSFETs. These include ultra-low input and output capacitance. Features include zero reverse recovery reducing switching losses by as much as 80% and low switch node ringing to decreasing EMI.

The LMG3410R070 GaN Power Stage provides new ways to achieve levels of power density and efficiency in power electronics systems. Dense and efficient topologies like the totem-pole PFC are enabled through these benefits. A unique set of features to simplify design, maximize reliability and optimize the performance of any power supply are integrated. This provides a smart alternative to traditional cascode GaN and standalone GaN FETs. These unique set of features include an integrated gate drive enabling 100V/ns switching with near zero Vds ringing and a 100ns current limiting that self-protects against unintended shoot-through events. These features also include a system interface signal providing a self-monitoring capability.


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